Field emission properties of two-layer structured SiCN films
The SEM micrograph of the SiCN film
The cross-sectional TEM image of the SiCN film
Field emission J/E curves of the SiCN and SiN. The inset shows the FN plot of the SiCN film
The long-time stability of SiCN film
F.G. Tarntair, J.J. Wu, K.H. Chen, C.Y. Wen, L.C. Chen, and H.C. Cheng, Surface & Coating Tech., 137, 152 (2001).
Low turn-on voltage field emission triodes with selective growth of carbon nanotubes
Process flow to fabricate the CNTs triodes array
SEM micrograph of the CNTs triode array
SEM micrograph of the CNTs triode device
Field emission current versus gate voltage, with anode was set at 600 V
F–N plot of the fabricated device; the linearity clarifies the field emission phenomenon
K. J. Chen, W. K. Hong, J. B. Lin, L. C. Chen and K. H. Chen, H. C. Cheng, IEEE Electron Device Lett., 22, 516 (2001).
SiC-capped nanotip arrays for field emission with ultralow turn-on field
Typical scanning electron microscopy micrograph of silicon nanotips fabricated monolithically by the ECR dry etching of Si(100) substrate.
A typical field emission data obtained from silicon nanotips fabricated monolithically by the ECR dry etching of Si(100) substrate, demonstrating the ultralow turn-on electric fields. The inset presents the emission current data plotted in the Fowler–Nordheim coordinates, wherein the dashed line represents a linear relationship for an ideal field emitter.
H. C. Lo, D. Das, J. S. Hwang, K. H. Chen, C. H. Hsu, C. F. Chen, L. C. Chen, Appl. Phys. Lett., 83, 18 (2003).