High growth rate deposition of oriented hexagonal InN films

XRD θ-2θ scan of the InN/Si(111) film and its peak assignment.

(a) The growth rate of InN as a function of substrate temperature without NH preheating. (b) The growth rate as a function of preheating  graphite temperature at a substrate temperature of 500 ^oC. The arrow in the figure indicates the reported growth rate in the literature.

J.H. Hwang, K.H. Chen, T.H. Li, L.G. Hwa, and L.C. Chen, Thin Solid Films 405, 194 (2002).

　It is very interesting that the InN nanotip is grown by vapor-liquid condensation process. There is always a catalyst on the top of the InN nanotips. It shows a clear six-sided symmetry with hexagonal structure.

 The InN nanotips reveal a strong direct emission of 0.76 eV, which is the energy band gap emission.