Abstract:
GaN exhibits a stable wurtzite structure as a new-generation and energy-saving white light source, e.g., light-emitting diode (LED). The commercial white-light LEDs are mostly made of a phosphor-assisted InGaN/GaN quantum well (QW) with cerium-doped yttrium aluminum garnet (YAG). However, the phosphor-assisted white-light InGaN/GaN LED will lose its efficiency in the electrical-to-luminous energy transferring by the coating phosphor. We have developed a technique to grow individual red-green-blue InGaN/GaN micro-disk QWs, which can produce the white light without the assistance of any phosphor for the energy sustainable lighting source. The GaN micro-disk showed a high efficient luminescence for phosphor-free white-light LED applications.
Brief Bio:
Dr. Ikai Lo (Ph.D. in Physics) is a professor of Physics Department, National Sun Yat-Sen University, Kaohsiung, Taiwan, and the principal investigator of Innovation and Application of Nanoscience Thematic Program, MOST (科技部奈米科技創新應用主軸計畫). He received his BS degree in Physics, National Tsing Hua University, Hsin-Chu, Taiwan (1980), and Ph. D. degree in Physics, State University of New York at Buffalo, NY, USA (1989). He served as a National Research Council (Washington, D.C.) post-doctoral fellow in Air Force Research Laboratory, Wright-Patterson Air Force Base, Dayton, Ohio, USA (1989 – 1993) with an honor of National Research Council (Washington D.C., USA) associateship award. He became a faculty of Physics Department, National Sun Yat-Sen University, Taiwan since 1989, Chairman of Physics Department (2000 – 2002), and Dean of Science College (2011 – 2014). Dr. Ikai Lo has been assigned as Director of the Center for Nanoscience and Nanotechnology (NSYSU), since 2017.