Atomic layer epitaxy for BN, AlN, GaN, TiN, and ferroelectric negative capacitance at a low growth temperature of 300oC

Abstract

We report on the recent progress from conventional atomic layer deposition (ALD) to a variety of atomic layer technologies, such as atomic layer annealing (ALA), atomic layer etching (ALE), atomic layer nucleation engineering (ALNE), etc. The topics include (1) ALA for the realization of ALE of BN, AlN, GaN, and TiN epitaxial layers at a low growth temperature of only 300oC, (2) ALE for negative capacitance in epitaxial ferroelectric devices, and (3) ALNE for high-K gate stack on top-gated MoS2 and WS2 transistors. The results demonstrate the promising capabilities of atomic layer technologies for the precise engineering of nanoscale materials and devices.