Bio: Yu-Chuan Lin studied the epitaxial growth and devices of two-dimensional (2D) materials at Pennsylvania State University and received a Ph.D. in MSE in Fall 2017. After PSU, he became a postdoctoral researcher at the Center for Nanophase Materials Sciences of Oak Ridge National Laboratory in Tennessee, working on ion implantation and in Situ experiments for 2D materials, and then a research professor back at PSU, focusing on MOCVD of TMDs. In the Spring of 2023, he joined the MSE Department at NYCU in Taiwan and started a lab focusing on synthesizing, processing, and characterizing 2D electronic materials.
Abstract: Two-dimensional (2D) transition metal dichalcogenides (TMDC), such as MoS2 and WSe2, exhibit useful material properties and versatile material chemistry for optoelectronic devices, quantum information, and energy missions. To realize these applications, we need to make them in large areas and be able to control their impurity concentrations. First, I will introduce our metalorganic chemical vapor deposition (MOCVD) process for deposition of TMDC epitaxial monolayers and the approach for growth of epitaxial TMDC multilayers on sapphire. Next, I will discuss how we introduced Re or V dopants into the cation sites of TMDC by MOCVD and their impact on the quality and properties of TMDC films.[1] In addition to cation substitutional doping, we can create Janus TMDC with an intrinsic dipole moment by replacing the elements at the anion sites (i.e., S and Se). I will present our result [2,3] of the conversion of 2D WS2 and MoS2 into 2D Janus WSSe and MoSSe by pulsed laser deposition and explain how we confirmed the presence of a dipole moment in 2D Janus TMDC optically. To improve the interface quality between TMDC and oxide dielectric materials for electronic applications, we developed thermal atomic layer deposition (ALD) of amorphous boron nitride (aBN) on both traditional and van der Waals surfaces. In the end, I will talk about nucleation and growth of aBN on MoS2 surface in our thermal ALD and aBN/MoS2 integration for improve field-effect transistor performance and quantum well fabrication.[4]
References:
[1] Torsi et al., ACS Nano 2023, 17, 15629–15640.
[2] Lin et al., ACS Nano 2020, 14, 3896–3906.
[3] Zheng et al., ACS Nano 2022, 16, 4197–4205.
[4] Chen et al., Nat. Comm. 2024 15, 4016.