Designed Heterostructures for Advanced Spintronic and Optical Applications

Abstract：
Heterostructures of dissimilar materials provide a powerful means to modulate phases of matter, achieve emergent functionalities inaccessible in bulk compounds, and ensure seamless integration into device architectures. In this seminar, I will discuss how the strategic design of heterostructures can unlock novel capabilities for next-generation spintronic and optical applications. First, I will present the observation of finite tunneling magnetoresistance and altermagnetic spin-splitting in RuO₂ [1, 2]. Despite its fully compensated magnetic moments, RuO₂ exhibits unique transport phenomena, suggesting it as a promising platform for field-immune, high-speed spintronic devices. In the second part, I will demonstrate machine-learning-optimized multilayer VO₂ thin films designed to overcome the intrinsic nonlinearity and hysteresis in correlated oxides. By achieving a high and linear temperature coefficient of resistance (TCR) under CMOS-compatible conditions, these multilayers exhibit a 20-fold enhancement in bolometric performance [3]. This approach provides a practical route toward ultra-high-sensitivity uncooled infrared sensors.