Abstract:
The 20th century ushered in the Information Age with the silicon electronics industry’s aggressive and persistent scaling down of the Complementary Metal-Oxide-Semiconductor Field-Effect Transistors’ (MOSFET) dimensions. However, we now face the impending stall of Moore’s Law and must find alternative materials and novel device concepts which may augment commercial silicon technology for enabling high performance and low power consumption. During the last decade, tremendous research efforts have been focused on two-dimensional (2D) materials due to their rich physics and great potentials for many applications.
Accordingly, in this talk we present some experimental results of 2D materials electronics, including high performance MoS2 field effect transistors [1], quasi-heterojunction bipolar transistor [2], tunnelling field effect transistor [3], vertical hot electron transistor [4], photodetector [5], magnetic property for spintronics [6], piezoelectric effect [7] and quantum tunnelling behaviour [8]. Our results suggest that electronics based on 2D materials could potentially lead to energy generation and low power dissipation for future device applications.
Reference
[1] “Effective N-Methyl-2-pyrrolidone wet cleaning for fabricating high-
performance monolayer MoS2 transistors”, https://doi.org/10.1007/s12274-018-2215-5. Nano Research (2018).
[2] “Atomic-Monolayer Two-Dimensional Lateral Quasi-Heterojunction Bipolar Transistors with Resonant Tunneling Phenomenon”, ACS Nano, 11(11), 11015-11023, 2017
[3] “Atomic-monolayer MoS2 band-to-band tunneling field-effect transistor”,
SMALL, doi:10.1002/smll.201601310, 2016.
[4] “High-current gain two-dimensional MoS2-base hot-electron transistors”, Nano
Letters 15, 7905-7912, 2015.
[5] “Self-aligned graphene oxide nanoribbon stack with gradient bandgap for visible-light photodetection”, Nano energy, 27, 114-120, 2016
[6] “Strong Rashba-Edelstein Effect-Induced Spin-Orbit Torques in Monolayer
Transition Metal Dichalcogenides/Ferromagnet Bilayers”, Nano Letters, 16(12), 7514-7520,2016.
[7] “Piezoelectric effect in CVD-grown atomic-monolayer triangular MoS2
piezotronics”, Nature Communications, 6, pp7430, 2015.
[8] “Resonant tunneling through discrete quantum states in stacked atomic-layered
MoS2”, Nano Letters, 14(5), pp 2381-2386, 2014.
Brief Bio:
Yann-Wen Lan is an Associate Professor in National Taiwan Normal University in Taiwan. He received the B.S. and M.S. degrees from Chemical Engineering, National Taipei University of Technology, Taipei, Taiwan, in 2002 and 2004, respectively. He earned the Ph.D. degree from the Institute of Electrical Engineering, National Taiwan University, Taipei, Taiwan, in Jan 2012. From Feb 2012 to Feb 2014, he was a postdoc researcher at Institute of Physics, Academic Sinica in Taiwan. From March 2014 to June 2016, he was a postdoc research fellow in Device Research Laboratory at UCLA. From July 2016 to July 2017, he was a Research Fellow in the National Nano Device Laboratories in Taiwan. His research interests include fundamental physics and practical applications based on 1D nanowire/nanotube, 2D layered materials and energy nanoelectronics.