Abstract
Research and developments on advanced semiconductors, especially wide energy pap GaN, SiC and ZnO based, various oxides, related materials and quantum/nano structures are very active in recent years. Energy-efficient and environmentally friendly solid-state light sources, in particular GaN-based light emitting diodes (LEDs), and solar cells, are currently bringing more applications and benefits to whole world [1]. The achievements on GaN-based blue LEDs were awarded for 2014 Nobel-Physics price. SiC is recognizing as the power electronic materials for the 21st century, with greatly enhanced R&D over the world [2]. ZnO is rapidly rising as the 3rd class of promising wide gap semiconductor [3]. New oxides & compound semiconductors are developing amazingly.
This presentation reports on our recent significant works, via multi-techniques of HR-XRD, HR-TEM, Raman scattering, photoluminescence (PL), PL excitation, time resolved (TR) PL, spectroscopy ellipsometry (SE), X-ray photoelectron spectroscopy (XPS), Rutherford backscattering (RBS), Synchrotron radiation (SR) X-ray absorption (XAS), combined with theory & simulation, on some materials and quantum/nano structures, as below:
1) III-Nitride (GaN,AlN,InN,AlGaN,InGaN,AlInGaN) materials & quantum well/nano-structural LEDs/LDs/QDs. Mysteries of unveiled physical origin of intense light generation from N-LEDs/LDs/QDs are explored.
2) Cross science-field studies on (3C-, 6H-, 4H-) SiC using Raman & resonant Raman scattering, SE, FTIR plus RBS, SR-XAS, XPS, etc., especially for epitaxial 3C-SiC/Si, 3C/4H-SiC, 6H/6H-SiC and 4H/4H-SiC.
3) Multi-technique investigation on MOCVD/PLD-grown ZnO, MgZnO, AlZnO, and InGaN/GaN/ZnO.
4) Other & related: high-k HfTaO2; Ga2O3, Solar cells (CdTe/CdS-, …); III-V & II-VI compounds.
The combination of theory-experiment, and interdisciplinary research are demonstrated. Some unsolved and challenging issues are presented. It’s hopeful to penetrate into fundamental concepts and properties, to explore & solve some tough problems, and to develop/enhance the Cross-Sea-Strait collaboration & exchanging, for students and professors, especially on our new Lab/instruments.
馮哲川傑出教授團隊工作在半導體與光電技術領域,著重於研究寬禁帶和化合物半導體材料與奈米結構暨器件的物理特性以及相關光電子技術，外延生長及光電子學特性、LEDs、光電轉換器件的構造及性能調控。實驗室平臺建設，在近一年時間已建立起多套的新光電子材料的光譜檢測設備：例如，寬光譜全穆勒矩陣橢偏光譜儀（193-1700nm）；微區拉曼與光致熒光光譜儀;深紫外微區外光路拉曼與光致熒光譜儀;時間分辨螢光光譜儀;光調製反射譜儀;光致熒光激發譜儀;深紫外-紅外吸收譜儀;深紫外-可見雷射器（266,360,375,405,457,532,561,671,785nm）及10-300K和77-870K低溫變溫光學測試系統等。將能進行較完善的先進光電子材料的寬光譜範圍及低溫和變溫的測試及研究。並結合同步輻射X-光吸收、盧瑟福背散射、X-光電子能譜技術、電腦理論模擬等深入研究各種寬禁帶和化合物半導體材料與奈米結構，特別是深紫外太陽光盲材料的基本物理特性。團隊目前包括4名教授、4名講師、1名研究助理和12名研究生，並希望招收新的博士後、講師、教授等，及邀請教授們進行休假研究或短期研究。
[1] Zhe Chuan Feng ed., III-Nitride Devices and Nanoengineering (2008), III-Nitride Semiconductor Materials (2006), Imperia College Press, London. {Two new review books on III-Nitrides and LEDs are in editing, to publish 2016}
[2] Zhe Chuan Feng ed., SiC Power Materials – Devices and Applications, Springer, Berlin, 2004.
[3] Zhe Chuan Feng ed., Handbook of Zinc Oxides and Related Materials: Vol. 1 Materials, Vol. 2 Devices and Nano-Engineering, CRC, Taylor & Francis, London/New York, 2012.
Brief Biography
馮哲川教授，獲得學士／碩士（1968／1981, 北京大學），博士（1987, 匹茲堡大學-美國），1988-2003工作於Emory大學（美），新加坡國立大學，EMCORE公司（美），材料工程研究院（新加坡），喬治亞理工學院;2003.8-15.1臺灣大學。2015年2月自臺灣大學光電所暨電機系（任教授11年後）退休，即受聘於廣西大學物理科學與工程技術學院，任傑出教授.建立並領導光電子材料與探測技術實驗室（依託廣西相對論天體物理重點實驗室）。至今他編輯出版了高效能複合半導體及顯微結構，多孔矽，III族氮化物半導體，III族氮化物元件，氧化鋅及奈米工程領域的9-本英文專書，並正編輯另2-本新英文專書（固態照明／LED及III族氮化物,今年出版），發表過600多篇學術論文（超過250篇SCI收錄）並被引用超過3,500次。從事於化合物和寬能隙半導體研究30多年。成果多且傑出，在國際寬能隙半導體研究領域有重要貢獻和影響。其許多寬能隙及化合物半導體論文被廣泛引用，多篇單篇他引超100多次。馮教授榮膺2013 SPIE Fellow。他受邀擔任四川大學、南京工業大學、華南師師範大學、華中科技大學、南開大學、天津師範大學的訪問客座教授。