From itinerant to single ion magnet – Spintronics in low dimensional magnets

Abstract: 

Development of Spintronics will be briefly reviewed, from Giant Magnetoresistance (GMR), spin transfer torque (STT), to spin orbit torque (SOT) effects. Itinerant magnetic materials play major role in these stages. More recently, topological materials, altermagnet, and van der Waals (vdW) materials, as well as their application in spintronics, attract attentions. In addition to Landau’s viewpoint that all states of matters and phase transitions can be described by symmetry, scientists found topology also plays an important role as the quantum Hall effect revealed. The variation of topology of the electronic band structure in momentum space manifests itself as Hall voltage plateaus as external magnetic field increases. We will present experimental results on itinerant two-dimensional (2D) vdW ferromagnet Fe₃GaTe₂ and single ion 2D antiferromagnet NiPS₃.