Abstract
Silicon-based photonic devices such as emitters and detectors have long been desired owing to the possibility of monolithic integration of photonics with high-speed Si electronics and the aspiration of broadening the reach of Si technology by expanding its functionalities well beyond electronics. To overcome the intrinsic problem of bandgap indirectness in the group-IV semiconductors of Si, Ge, and SiGe alloys, a new group-IV material platform silicon-germanium-tin alloy (SiGeSn) emerged as a promising material system, featuring compatibility with current CMOS process, capability of monolithic integration on Si, and the tunable bandgap allowing the optoelectronic devices operation covers broad wavelength in near- and mid-infrared ranges. In this talk, I shall present the development in photonic devices based on such a group-IV material system including photodetectors, LEDs, and lasers covering the wide spectrum of mid-IR to far-IR/THz in the last two decades.
Biography:
Following receiving his Ph.D. in Electrical Engineering from Johns Hopkins University in 1993, Greg Sun joined the faculty at the University of Massachusetts Boston where he is currently a professor of Electrical Engineering. He led the effort in establishing the first publicly supported Engineering Program in the City of Boston, serving as the founding Chair of the Engineering Department at UMass Boston. His research interests are in semiconductor optoelectronics, silicon photonics, and nano-plasmonics. He has published over 170 papers in refereed journals and book chapters, delivered over 160 invited and contributed conference talks, and given over 50 seminars and colloquia. He is a fellow of Optica, formally Optical Society of America and of American Physical Society (APS). He is now a deputy editor for Journal of Lightwave Technology.